Samsung opens the door for faster, smaller, and green 4GB DIMMs
Samsung Electronics today announced its development of the first all-DRAM stacked memory, which will soon result in memory packages that are faster, smaller, and energy efficient.
With the development of a 2Gb DRAM, using ‘through silicon via’ (TSV) technology, Samsung can create a 4 Gigabyte DIMM based on advanced WSP (wafer-level-processed stacked package) technology for the first time.
“The innovative TSV-based MCP (multi-chip package) stacking technology offers next-generation packaging solution that will accommodate the ever-growing demand for smaller-sized, high-speed, high-density memory,” said Tae-Gyeong Chung, vice president, Interconnect Technology Development Team, Memory Division, Samsung Electronics.
Multi-chip packages, today, consist of many integrated circuits enclosed in a single module; the chips are stacked vertically or placed horizontally aside each other, and are internally connected by fine wires buried in the package.
Samsung’s Advanced WSP technology makes use of laser-cut micron-sized holes combined with a copper filling for the connectivity of the module chips; therefore, eliminating the need for the extra space (normally required for wires) between stacked chips and allowing a significantly smaller footprint and an overall thinner package.
Chung added: “In addition, the performance advancements achieved by our WSP technology can be utilized in many diverse combinations of semiconductor packaging, such as system-in-package solutions that combine logic with memory.”
This method not only allows for a reduction in size, faster operation, and less power consumption; but resolves the concern with multi-chip packages that use high speed memory chips suffering from performance limitations when connected using wires.
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